Uni Fakultäten Fk. V Physik GRECO Publ. Tagungsbeiträge  

referierte Tagungsbeiträge (Zeitschriften, Konferenzbände) und Vortragsbeiträge

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• R. Brüggemann, Mobility-lifetime products in microcrystalline silicon,Journal of optoelectronics and advanced materials 7, 495 (2005).
   
• R. Brüggemann, M. Rösch, Application of Sc-Simul: numerical simulation for thin-film silicon based devices,Journal of optoelectronics and advanced materials 7, 65 (2005).
   
• R. Brüggemann, M. Rösch, S. Tardon, G. H. Bauer, Application of SC-Simul for numerical modeling of the opto-electronic properties of heterojunction diodes, in: Amorphous and nanocrystalline silicon science and technology - 2005 / eds.: R. Collins .Warrendale, Pa. - 2005. - ( Materials Research Society symposium proceedings, 862). - S. A9.3.1 - A9.3.6
   

• Posterbeitrag G/PIII.10 zur E-MRS 2004. F. Voigt, R. Brüggemann, T. Unold, F. Huisken, G. H. Bauer, POROUS THIN FILMS GROWN FROM SIZE-SELECTED SILICON NANOCRYSTALS.
   
• F. Voigt, R. Brüggemann, F. Huisken und G. H. Bauer, Porous Thin Films Grown by Size-Selected Si-Nanoparticles, Verhandl. DPG (VI) 39, 2/2004.
   
• R. Brüggemann, C. Longeaud, J. P. Kleider, Transient and modulated photoconductivity in microcrystalline silicon,Materials Research Society symposium proceedings 808, A9.8.1 (2004).
   
• R. Brüggemann, R. I. Badran, Electric-field dependence of photocarrier properties in the steady-state photocarrier grating experiment, Materials Research Society symposium proceedings, 808, A.9.7.1 (2004).
   
• R. Brüggemann, S. Brehme, J. P. Kleider, M. E. Gueunier, W. Bronner, Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon,Journal of non-crystalline solids 338/340, 477 (2004).
   
• S. Tardon, M. Rösch, R. Brüggemann, T. Unold, G. H. Bauer.Photoluminescence studies of a -Si:H/c-Si-heterojunction solar cells, Journal of non-crystalline solids 338/340, 444 (2004).
   

• R. Fuhrmann, R. Brüggemann, K. Bothe, T. Unold, G. H. Bauer, Correlation of Local Morphological and Optoelectronic Features of Cu(GaIn)Se2 Solar Cell Absorbers in the 2-Dimensional Spatial Frequency Domain, Verhandlungen der DPG, HL14.96, (2003)
   
• S. Tardon, R. Brüggemann, T. Unold, G.H. Bauer, Recombination studies in a-Si:H/c-Si-Heterojuntions by calibrated Photoluminescence, Verhandlungen der DPG, HL14.97, (2003)
   
• R. Brüggemann, O. Kunz, Steady-state photocarrier grating technique for the determination of the minority-carrier diffusion length in microcrystalline silicon, Verhandlungen der DPG, HL49.25, (2003)
   
• F. Voigt, R. Brüggemann, T. Unold, J.-P. Kleider, A. Colder, F. Huisken, G.H. Bauer, Analysen des Ladungstransports in Silizium-Nanokristallit-Dünnschichten, Verhandlungen der DPG, HL49.38, (2003)
   
• L. Govor, E. Shevchenko, G. H. Bauer, J. Parisi, Self-Assembly of CoPt3 Nanoparticle Rings in Thin Polymer Films, Verhandlungen der DPG, CPP 2.11, (2003)
   
• R. Brüggemann, Parameters for photoelectronic characterisation and the Fermi level in amorphous silicon, Thin Solid Films 427, 355 (2003).
   
• R. Brüggemann, P. Reinig und M. Hölling, Thickness dependence of optical scattering and surface roughness in microcrystalline silicon, Thin Solid Films 427, 358 (2003).
   
• F. Voigt, R. Brüggemann, T. Unold, J.-P. Kleider, A. Colder, F. Huisken und G.H. Bauer, Analysen des Ladungstransports in Silizium-Nanokristallit-Dünnschichten, Verhandl. DPG (VI) 38, 5/2003.
   

• R. Brüggemann, S. Reynolds, and C. Main, Transient decay from the steady-state in microcrystalline silicon, MRS Symp.  Proc. 715, A21.3 (2002).
   
• G.H. Bauer, F. Voigt, R. Carius, M. Krause, R. Brüggemann, and T. Unold,Electronic Properties of Microcrystalline SiGe Thin Films by Hall Experiments and Photo and Dark Transport, J. Non-Cryst. Solids 299-302, 153 (2002).
   
• W. Bronner, J.P. Kleider, R. Brüggemann, P. Roca i Cabarrocas, D. Mencaraglia, and M. Mehring,Comparison of Transport and Defect Properties in Hydrogenated Polymorphous and Amorphous Silicon, J. Non-Cryst. Solids 299-302, 551 (2002).
   
• M. J. Gueorguieva, C. Main, S. Reynolds, R. Brüggemann, and C. Longeaud, Probing Defect Distributions in Semiconductors by Laplace Transform Transient photocurrent Spectroscopy, J. Non-Cryst. Solids 299-302, 541 (2002).
   
• R. Brüggemann, J.P. Kleider, W. Bronner, and I. Zrinscak, Influence of Electron and Proton Radiation on the Electronic Properties of Microcrystalline Silicon,J. Non-Cryst. Solids 299-302, 632 (2002).
   
• J.P. Kleider, M. Gauthier, C. Longeaud, D. Roy, O. Saadane, and R. Brüggemann, Spectral photoresponses and transport properties of polymorphous silicon thin films, Thin Solid Films 403-404, 188 (2002).
   
• R. Brüggemann and J.P. Kleider, Photoconductivity techniques for defect spectroscopy of photovoltaic materials, Thin Solid Films 403-404, 30 (2002).
   
• F. Voigt, R. Brüggemann, T. Unold, J.P. Kleider, G.Ledoux, F. Huisken und G.H. Bauer, Ladungstransport in dünnen Schichten aus Silizium-Nanokristallen, Verhandl. DPG (VI) 37, 1/2002.

• J.P. Kleider, C. Longeaud, R. Brüggemann, and F. Houzé, Electronic and topographic properties of amorphous and  microcrystalline silicon thin films, Thin Solid Films 383, 57 (2001).
   
• C. Niikura, R. Brenot, J. Guillet, J.E. Bouree, J.P. Kleider, R. Brüggemann, C. Longeaud,Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate, Solar Energy Mat. & Solar Cells 66, 421 (2001).
   
• T. Unold, K. Bothe, G.H. Bauer, P. Powall, Optical properties and photoluminescence of CuInGaSe2 thin films,  Mat. Res. Soc. Spring Meeting, San Francisco 2001
   
• T. Unold, K.Brendel, M. Rösch, G.H. Bauer, Tunneling and Defects in a-Si/c-Si Heterojunctions, Mat. Res. Soc. Spring Meeting, San Francisco, 200
1
 
• T. Unold, M. Haak, C. Meyer, G.H. Bauer, Electrical Transport in C60 Fullerene Thin Films,  Mat. Res. Soc. Spring Meeting, San Francisco 2001
   
• K. Bothe, T. Unold, G.H. Bauer, Photolumineszenz von ploykristallinem CuInGaSe2 mit Mikrometer Ortsauflösung, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL17.10), Hamburg 2001
   
• T. Unold, K. Brendel, G.H. Bauer, Tunnel-Transport in a-Si:H/c-Si Heterobarrieren aus Kapazitätsanalysen, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.79), Hamburg 2001
   
• F. Voigt, T. Unold, R. Brüggemann, R. Carius, G.H. B-auer, Analyse des Ladungstransports in µc-SiGe mit Hall- und Photoleitung, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.82),  Hamburg 2001
   
• M. Haak, T. Unold, G.H. Bauer, Transiente Photoleitung in mikrokristallinen C60-Dünnschichten,  DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL31.2),  Hamburg 2001
   
• D. Schlettwein, H. Graf, W. Michaelis, N. Jaeger, D. Wöhröle, T. Unold, G.H. Bauer, H. Yang, Design of molecular interactions in organic semiconductors to control the conduction type and emission yield of thin films, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, SYOF5.22),  Hamburg 2001
   
• R. Brüggemann, W. Bronner, M. Mehring, Elektronenbestrahlung von mikrokristallinem Silizium,  DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.84),  Hamburg 2001
   
• W. Bronner, R. Brüggemann, M. Mehring, Änderung der optoelektronischen und der Transporteigenschaften von mikrokristallinem Silizium durch Elektronenbestrahlung, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.84),  Hamburg 2001.
   
• T. Unold, C. Meyer, G.H. Bauer, Conductivity transients in C60 fullerene thin films, Synthetic Metals vol.121, number 1-3, 1179-1180 (2001)
   
• D. Schlettwein, H. Graaf, W. Michaelis, N.Jaeger, T. Unold, G.H. Bauer, H. Yanagi, Design of domain size molecular interactions in organic semiconductors to control the emission yield of thin films, Proceedings- spie the international Society for optical engineering ISSU 4456, 48-56 (2001)
   
• K. Bothe, G.H. Bauer, T. Unold, Spatially resolved photoluminescence in CuGaInSe2 films, Thin Solid Films  (2001)
   
• F. Voigt, T. Unold, R. Brüggemann, R. Carius, G.H. Bauer, Analyse des Ladungstransports in µc-SiGe mit Hall- und Photoleitungsmessungen, Verhandl. DPG (VI) 36, HL24.82, Hamburg, 2001.
   

• G.H. Bauer, B. , B.von Roedern, Theoretical Study of Benefit of Bufferlayers for Open Circuit Voltages in Solar Cells, Proc. 16 EU Photovoltaic Solar En. Conf. ed. H. Scheer et al., James & James Scient. Publ. London, 2000, p. 173
   
• C. Longeaud, J.P. Kleider, M. Gauthier, R. Brüggemann, Z. Teukam Hangouan, P. Roca, Transport Properties and Solar Cell Applications of Hydrogenated Polymorphous Silicon, Proc. 16 EU Photovoltaic Solar En. Conf. ed. H. Scheer et al., James & James Scient. Publ. London, 2000, p.625
   
• C. Longeaud, J.P. Kleider, M. Gauthier, R. Brüggemann, Y. Poissant, P. Roca i Cabarrocas, Polymorphous Silicon: Transport Properties and Solar Cell Applications, Proc. MRS Symp. 557,  501-506 (2000)
   
• R. Brüggemann, F. Houze, Surface Roughness and Optical Scattering in Microcrystalline Silicon, Proc. 16 EU Photovoltaic Solar En. Conf. ed. H. Scheer et al., James & James Scient. Publ. London, 2000, p.641
   
• R. Brüggemann, J.P. Kleider, C. Longeaud, Electronic Properties of Thin Film Silicon, Proc. 16 EU Photovoltaic Solar En. Conf., ed. H. Scheer et al., James & James Scient. Publ. London, 2000, p. 645

 
• T. Unold, D. Berkhahn, B. Dimmler, G.H. Bauer, Open Circuit Voltage and Loss Mechanisms in Polycrystalline Cu(InGa)Se2 Heterodiodes from Photoluminescence Studies, Proc. 16 EU Photovoltaic Solar En. Conf., ed. H. Scheer et al., James & James Scient. Publ. London, 2000, p. 736
   
• F. Voigt, R. Carius, T. Unold, M. Krause, G.H. Bauer, Ladungstransport in mikrokristallinen Si-Ge-Schichten, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL15.2), Regensburg, 2000

 
• K. Brendel, A. Froitzheim, K. Kliefoth, M. Schmidt, W. Fuhs, G.H. Bauer, Einfluß von Grenzflächeneigenschaften auf den a-Si:H/c-Si Heterokontakt, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL15.3) Regensburg, 2000
   
• R. Brüggemann, J.-P. Kleider, C. Longeaud, Electronic properties of thin film silicon, DPGFrühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL15.12), Regensburg, 2000
   
• G.H. Bauer, Theoretical study of buffer layer effect on open circuit voltage in solar cells, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL27.57), Regensburg, 2000
   
• G.H. Bauer, Theoretische Limts für multispektrale Wandlung solarer Strahlung mit Berücksichtigung der optischen Kopplung, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL31.10), Regensburg, 2000
   
• G.H. Bauer, Study of buffer/passivation layer effects on Voc in solar cells, Proc. 12 Int. Workshop on Quantum Solar Energy Conversion, Selva-Wolkenstein (I), March 2000,  ed. H. Tributsch.HMI-Berlin, p. 32
   
• B. von Rödern and G.H. Bauer, Material Requirements For Buffer Layers Used to Obtain Solar Cells With High Open-Circuit Voltages, Proc. MRS Symp. 557, 761 (2000)
   
• R. Brüggemann, J.P. Kleider, C. Longeaud and F. Houzé, Electronic and optical properties of thin silicon films, to be published in Materials for Information Technology in the New Millennium, edited by J.M. Marshall et al. (World Scientific, Singapore, 2000)
   
• R. Brüggemann, J.P. Kleider and C. Longeaud, Electronic properties of thin film silicon, Proc. 16 European Photovoltaic and Solar Energy Conference, 2000
   
• R. Brüggemann and F. Houzé, Surface roughness and optical scattering in microcrystalline silicon, Proc. 16 European Photovoltaic and Solar Energy Conference, 2000
   
• M. Rösch, T.Unold, R. Pointmayer and G.H. Bauer, Capacitance Spectroscopy on amorphous/crystalline Silicon Heterojuctions, Proc. MRS Symp. 557, 463 (2000)
   
• T. Unold, M. Rösch, G.H.Bauer, Transport and Recombination in Amorphous/Crystalline Silicon Heterojuncti-ons, J. Non-Crystalline Solids 266/269, 1033 (2000)
   
• T. Unold, T. Binnewies, R. Brüggemann and G.H. Bauer, Photoinduced Space Charge Effects in a-Si:H Solar Cells, Proc. MRS Symp. 557; 875-880 (2000)
   
• T. Unold, R. Brüggemann, J.P. Kleider, C. Longeaud, Anisotropy in the transport of microcrystalline silicon, Journal of Non-Crystalline Solids  266-269, 325 (2000)
   
• R. Brüggemann, J.P. Kleider, C. Longeaud, D. Mencaraglia, J. Guillet, J.E. Bourée and C. Niikura, Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition, J. Non-Crystal. Solids 266-269, 258 (2000)
   
• W. Bronner, R. Brüggemann, M. Mehring, Standard and electrically detected magnetic resonance in nanocrystalline silicon, J. Non-Crystal. Solids 266-269, 534 (2000)
   
• G.H. Bauer and B. von Roedern, Theoretical Study of Buffer Layers on Open Circuit Voltages in Solar Cells,  Proc. 16 European Photovoltaic and Solar Energy Conference, 2000, in print
   
• T. Unold, D. Berkhahn and G.H. Bauer, Open Circuit Voltage and Loss Mechanismsim Polycrystalline CuInGaSe2-Heterodiodes from Luninescence Studies, Proc. 16 European Photovoltaic and Solar Energy Conference, 2000, in print
   
• J.P. Kleider, C. Longeaud,  R. Brüggemann and F. Houzé, Electronic and topographical properties of amorphous and microcrystalline silicon thin films, Thin Solid Films (2000)
   
• J. Guillet, C. Niikura, J.E. Bouree, J.P. Kleider, C. Longeaud, R. Brüggemann, Microcrystalline silicon deposited by the hot-wire CVD technique, Mat. Science & Eng. B 69, 282 (2000)
   
• F. Voigt, R. Carius, T. Unold, M. Krause, G.H. Bauer, Ladungstransport in mikrokristallinen Silizium-Germanium-Schichten ( c-SiGe:H), Verhandl. DPG (VI) 36, HL15.2, Regensburg, 2000.
   

• T.Unold, G.H. Bauer, On the Problem of Photodegradation in Quantum Solar Energy Converters,  Proc. 11 Quantsol, Wildhaus (CH), March 1999, ed. J. Gobrecht, PSI, Villigen (CH)
   
• G.H. Bauer, D. Berkhahn, T. Unold, Quasi-Fermi Level Splitting From Luminescence in Cu(InGa)Se2 Films and Solar Cells, Proc. 11 Int. Workshop on Quantum Solar Energy Conversion, Wildhaus (CH), March 1999, ed. J. Gobrecht, PSI, Villigen (CH)
   
• P. Kanschat, K. Kliefoth, W. Füssel, G.H. Bauer, Tunnelprozeßbestimmte Rekombinationsgeschwindigkeiten an MIS-Kontakten auf Silizium, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL5.12) Münster 1999
   
• R. Brüggemann, J.-P. Kleider, C. Longeaud, Elektronische Eigenschaften von nanokristallinem Silizium aus Hot-Wire Deposition,  DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL5.12), Münster 1999
   
• T. Unold, M. Rösch, R. Pointmayer, G.H. Bauer, Bandsprünge in Heterostrukturen aus amrphem/kristallinem Silizium, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL36.12), Münster 1999
   
• T. Unold, D. Berkhahan, G.H. Bauer, Minoritätsladungsträger-Rekombination in CuInGaSe2, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL44.2), Münster 1999
   

• T. Binnewies, T. Unold, R. Brüggemann, G.H. Bauer, Characterization of the Internal Field Distribution in Thin a-Si:H Solar Cells, Proc. 2 World Conf. on Photovoltaics and Solar Energy Conversion, H.S. Stephens & Assoc., Bedford (UK), 1998, p. 960
   
• R. Brüggemann and G.H. Bauer, Photoconductive Properties of Hydrogenated Amorphous Silicon In The Light of The Positive Dangling Bond As The Main Recombination Center - Consequences From The Defect pool Model, J. Non-Cryst. Sol. 230, 197 (1998)
   
• R. Brüggemann, A. Hierzenberger, P. Reinig, M. Rojahn, M. B. Schubert andS. Schweizer, H.N. Wanka, I. Zrinšzak, Electronic and Optical Properties of Hot-Wire Deposited Microcrystalline Silicon, J. Non-Cryst. Solids 227-230, 982 (1998)
   
• R. Brüggemann, A. Hierzenberger, H.N. Wanka and M.B. Schubert, Electronic properties of hot-wire deposited nanocrystalline silicon, Proc. MRS Symp. 507, 921 (1998).
   
• G.H. Bauer, M. Voß, R. Brüggemann and T. Unold, Influence of Optical Coupling on Multspectral Photovoltaics, Proc. 2 World Conference on Photovoltaic Solar Energy Conversion, Europ. Comm., Direct. Gen.Joint Res. Center, Environm. Inst. 1998, p. 132
   
• M. Rösch, R. Brüggemann and G.H. Bauer, Influence of Interface Defects on Current Voltage Characteristics of Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells, Proc. 2 World Conference on Photovoltaic Solar Energy Conversion, Europ. Comm., Direct. Gen.Joint Res. Center, Environm. Inst. 1998, p. 964
   
• T. Unold, T. Binnewies, R. Brüggemann and G.H. Bauer, Investigation of Space Charge Effects in Thin a-Si:H Solar Cells, Proc. 2 World Conference on Photovoltaic Solar Energy Conversion, Europ. Comm., Direct. Gen.Joint Res. Center, Environm. Inst. 1998, p. 960
   
• T. Unold, R.C. Reedy and A.H. Mahan, Defects in hot-wire deposited amorphous silicon: results from electron spin resonance, Journal of Non-Cryst. Solids 227-230, 362 (1998)
   
• P. Kanschat, K. Lips, R. Brüggemann, A. Hierzenberger, I. Sieber and W. Fuhs, Paramagnetic defects in undoped microcrystalline silicon deposited by the hot-wire technique, Proc MRS Symp. 507, 793 (1998).
   
• H.N. Wanka, R. Brüggemann, C. Köhler, I. Zrinscak and M.B. Schubert, Effect of filament bias on the properties of amorphous and nanocrystalline silicon from hot-wire chemical vapor deposition, Proc. MRS Symp. 507, 915 (1998).
   
• M. Rösch, R. Brüggemann, T. Unold, G.H. Bauer, Influence of Interface Defects on the Current-Voltage-Characteristics of Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells, Proc. 2 World Conf. on Photovoltaics and Solar Energy Conversion, H.S. Stephens & Assoc., Bedford (UK), 1998, p. 964
   
• G.H.  Bauer, M. Voss, R. Brüggemann, T. Unold, Influence of Optical Coupling in Multispectral Photovoltaics, Proc. 2 World Conf. on Photovoltaics and Solar Energy Conversion, H.S. Stephens & Assoc., Bedford (UK), 1998, p. 132
   
• H. Cordes, R. Brüggemann, Generationsabhängigkeit der Photostromantwort in amorphen Halbleitern, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.27), Regensburg 1998
   
• T. Binnewies,T. Unold, R. Brüggemann, G.H. Bauer, Spektrale Quanteneffizienz von a.Si:H Dioden unter Biasbeleuchtung, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.28), Regensburg 1998
   
• M. Rohjan, R. Brüggemann, Dunkel- und Photoleitung in mikrokristallinem Silizium, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.45), Regensburg 1998
   
• P. Reinig, R. Brüggemann, G.H. Bauer, Optische Streuung in mikrokristallinem Silizium aus Hot-Wire-CVD, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.45), Regensburg 1998
   
• M. Rösch, R. Pointmayer, T. Unold, G.H. Bauer, Defektspektroskopie an Heteroübergängen aus (n)-amorphem/(p)-kristallinem Silizium, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL24.138), Regensburg 1998
   
• D. Berkhahn, G.H. Bauer, T. Unold, B. Dimmler, Stationäre Photolumineszenz in CuInGaSe2, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL26.10), Regensburg 1998
   

• H.-D. Mohring, C.-D. Abel, R. Brüggemann and G.H. Bauer, Characterization of High Quality a-SiC:H Films by µτ-Products for Electrons and Holes, J. Non-Cryst. Sol. 210, 306 (1997)
   
• R. Brüggemann, J.-H. Zollondz, C. Main and W. Gao, Conditions for collection efficiencies > 100%,  Proc. MRS Symp. 467, 759 (1997)
   
• T. Neidlinger, R. Brüggemann, H. Brummack, and M.B. Schubert, Voltage controlled colour separation in two-terminal a-Si:H based sensor structures,  In: Proc. 27th European Solid-State Device Research Conference, Ed.. H. Grünbach (Editions Frontieres, Paris, 1997), 692
   
• A.H. Mahan, E. Iwaniczko, B.P. Nelson, R.C. Reedy Jr.,T. Unold, R.S. Crandall, S. Guha and J. Yang, Hot wire deposited hydrogenated amorphous silicon solar cells, AIP Conference Proceedings, 394, 27 (1997)
   
• Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C., Jr.; Unold, T.; Crandall, R.S.; Guha, S.; Yang, J., Hot wire deposited hydrogenated amorphous silicon solar cells, AIP Conference Proceedings 394, (1997) 27
   
• G.H. Bauer, R. Brüggemann, J.-H. Zollondz, Spectral collection efficiency >1 in a-Si:H-pin-diodes – an extremely sensitive tool for metastable changes, Proc. 9 Int. Workshop Frontiers in Quantum Solar Energy Conversion,  ed. Chr. Königstein, TU Vienna (Austria) (1997) p. 15
   
• T.Unold,  R.C. Reedy, A.H. Mahan, Study of Interface Defects in Hot-Wire Deposited Amorphous Silicon,  Proc. 14 EU Photovoltaic Solar Energy Conference, H.S. Stephens & Assoc., Bedford (UK), 1997 p.625
   
• T. Unold and A.H. Mahan, ESR Study on Hot Wire Amorphous Silicon, Mat. Res. Soc. Symp. Proc (1997) 663
   
• G.H.  Bauer, R. Brüggemann, Intrinsic Limits for the Efficiency of a-Si:H-Based Solar Cells From Thermodynamic Considerations, Proc. 14 EU PVSEC, H.S. Stephens & Assoc., Bedford (UK), 1997, p. 558
   
• R. Brüggemann, R. Worm, N. Bernhard, G.H. Bauer, Electron, Hole and Transient Properties of Amorphous Silicon Based pin-Diodes from Modulated Photoconductivity Studies, Proc. 14th EU PVSEC, H.S. Stephens & Assoc., Bedford (UK), 1997, p. 612
   
• T. Unold, H. Branz, G.H. Bauer, Optische Absorption unter Licht - Bias in amorphem Silizium, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL11.17), Münster 1997
   
• R.B. Wehrspohn, G.H. bauer, J.-N. Chazalviel, F. Ozanam, I. Solomon, Porous amorphous silicon – spatial confinement vs quantum confinement, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL36.19), Münster 1997
   
• H. Cordes, R. Brüggemann, Kritische Analyse des Photostromabfalls in amorphen Halbleitern, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL21.7), Münster 1997
   
• K. Schersich, R.B. Wehrspohn, G.H. Bauer, Photolumineszenz zur Detektion von Anregungszuständen, DPG-Frühjahrstagung, Festkörperphysik, (Verhandlungen der DPG, HL22.61), Münster 1997
   

• G.H. Bauer, R. Brüggemann, M. Rösch, Metastability Effects in a-Si:H/c-Si Heterojunctions, Proc. 8 Int. Workshop Frontiers in Quantum Solar Energy Conversion,  ed. Chr. Königstein, TU Vienna (Austria) (1996) p. 37
   
• R. Brüggemann and G.H. Bauer, Identification and Explanation of Peculiar Features in Hole SCLC-TOF in a-Si:H pin-Diodes From Numerical Modelling, J. Non-Cryst. Sol. 200, 186 (1996).
   
• J.H. Zollondz, R. Brüggemann, S. Reynolds, C.- Main, W. Gao and G.H. Bauer, Study of Space-Charge Effects by Spectral Response, Steady-State Charge Collection and Transient Photocurrents in Thick a-Si:H pin-Diodes, Proc. MRS Symp. Proc 420, 251 (1996).
   
• R. Brüggemann, C. Main, M. Rösch and D.P. Webb,  Determination of the density-of-states in a-SiC:H from transient photoconductivity, MRS Symp. Proc. 420, 697 (1996)
   
• K.Lips, T.Unold, Y.Xu, and R.S.Crandall, Emission limited filling of deep defects in transient capacitance experiments, Journal of Non-Crystalline Solids 198-200, 525 (1996)
   
• T.Unold, H.M.Branz and M. Vanecek, Light-Bias CPM Studies of the density of states in n-type amorphous silicon, Mat.Res.Soc.Symp.Proc. 420, (1996)
   

• R. Brüggemann and G.H. Bauer, Numerical Modelling of Time-of-Flight in SCLC-Mode, Proc. MRS Symp. 377, 497 (1995)
   
• A.A. Pasa, M. Neugebauer, W. Losch and G.H. Bauer, Simulation of Nucleation And Growth of Si-Grains Inside Au-Thin Films, Proc. MRS Symp. 389, 167 (1995)
   
• T. Unold and H.M. Branz, Monte Carlo simulations of defect relaxation in hydrogenated amorphous silicon, Mat. Res. Soc. Symp. Proc. 377, 293 (1995)
   
• Howard M. Branz, T. Unold, and P.A. Fedders Structural Memory and Defect Relaxation, Journal of Non-Crystalline Solids 198-200, 535 (1995)
   

• N. Bernhard, G.H. Bauer, Analysis of the Physical Origin of the Blue Shift of the Optical Band Gap of a-Si:H based Multilayers, Proc. MRS Symp. 336, 401 (1994).
   
• N. Bernhard and G.H. Bauer, Analysis of the Physical Origin of the bblue Shift of the Optical Band Gap of a-Si:H based Multilayers, Proc. MRS Symp. 336, 401 (1994)
   
• N. Bernhard, G.H. Bauer, Ambipolar Diffusion Length in a-Si:H/a-SiC:H and a-Si:H/a-SiGe:H Multilayers Determined By the Grating Method, Proc. MRS Symp. 336, 625 (1994)
   
• T. Unold, The role of the band gap in the light-induced degradation of amorphous silicon alloys, Mat.Res.Soc.Symp.Proc. 336, 287 (1994)
   

• R. Zedlitz, M. Heintze and G.H. Bauer, An Approach to High Quality a-Ge:H By VHF Deposition, Proc. MRS Symp. 297, 55 (1993)
   
• M. Heintze, R. Zedlitz and G.H. Bauer, Mechanism of High Rate a-Si:H Deposition in a VHF Plasma, Proc. MRS Symp. 297, 49 (1993)
   
• N. Bernhard, B. Frank, B. Movaghar, G.H. Bauer, Irregular Transport through a-Si:H Based Potential Barriers, Proc. MRS Symp. 297, 401 (1993)
   
• R. Brüggemann, N. Bernhard, C. Main, G.H. Bauer, Numerical Simulation and Experi-mental Investigations of The Time-Of-Flight Technique Applied to a-Si:H/a-SiGe:H-Hetero-junctions, Proc. MRS Symp. 297, 413 (1993)
   
• N. Bernhard, B. Frank and G.H. Bauer, Random Telegrafic Noise in a-SiC:H Schottky Barriers, J. Noncryst. Sol. 164-166, 473 (1993)
   
• R. Brüggemann, C. Main and G.H. Bauer, Some Aspects of The Role of Holes in The Tran-sient Response of a-Si:H PIN Diodes,  J. Noncryst. Sol. 164-166, 663 (1993)
   
• R. Platz, R. Brüggemann and G.H. Bauer, More Insights From The Simulation For The Interpretation of The Constant Photocurrent Method, J. Noncryst. Sol., 164-166, 355 (1993)
   
• K. Eberhardt and G.H. Bauer, Effect of H-Content and H-Bonding configuration on Light and Thermal Induced Metastability in a-Ge:H, J. Noncryst. Sol. 164-166, 19 (1993)
   
• J. Hautala, T. Unold, and J.D. Cohen, Effect of C impurities in a-Si:H measured by drive-level capacitance, photocurrent, and electron spin resonance, Mat.Res.Soc. Symp.Proc. 297, 375 (1993)
   
• T.Unold, and J.D.Cohen, Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD, Journal of Non-Crystalline Solids 164-166 23 (1993)