Uni Fakultäten Fk. V Physik GRECO Publ. Zeitschr.aufsätze  

Zeitschriftenaufsätze

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• F. Voigt, R. Brüggemann, T. Unold, F. Huisken, G. H. Bauer, Porous thin Films grown from size-selected SILICON NANOCRYSTALS, Materials Science and Engineering C (wird unter Voraussetzung der Akzeptanz vor. August 2005 publiziert).
   
• T. Jürgens, L. Gütay, G.H. Bauer, "Photoluminescence, Open Circuit Voltage, and Photocurrents in Cu(In,Ga)Se2 Solar Cells with Lateral Submicron Resolution" submitted to Thin Solid Films (2005).
   
• G.H. Bauer, L. Gütay, R. Fuhrmann,"Extraction of Features from 2-D Laterally Sub-Micron Resolved Photoluminescence in Cu(Ga,In)Se2 Absorbers by Fourier Transforms and Minkowski-Operations" submitted to Thin Solid Films (2005).
   
• G.H. Bauer," Spatial Inhomogeneities of Cu(InGa)Se2 Solar Cell Absorbers in the Mesoscopic Scale", submitted to Springer Series in Material Science (2005) .
   
• L. V. Govor, G.H. Bauer, G. Reiter, J. Parisi, "Treelike Branch Structures Formed in Dewetting Thin Films of a Binary Solution", Langmuir, submitted(2005).
   
• L. V. Govor, G. Reiter, G.H. Bauer, J. Parisi, "Bilayer Formation in Thin Films of a Binary Solution", J. Appl. Phys. submitted (2005)
   
• F. Voigt, R. Brüggemann, T. Unold, F. Huisken, G.H. Bauer,"Porous thin films grown from size-selected silicon nano-crystals",submitted to Materials Science and Engineering (2005).
   
• L. V. Govor, J. Parisi, G.H. Bauer, G. Reiter, " Instability and Droplet Formation in Evaporating Thin Films of a Binary Solution"Phys. Rev. E 71 (2005) 051603.
   
• L. Gütay, G.H. Bauer,"Lateral Variations of Optoelectronic Properties of Cu(In1-xGax)Se2 in the Sub-Micron Scale", submitted to Thin Sold Films (2005).
   
• G.H. Bauer, L. Gütay, R. Kniese," Structural properties and quality of the photo-excited state in Cu(In1-xGax)Se2 solar cell absorbers with lateral submicron resolution", Thin Solid Films 480-481 (2005) 259-263.
   
• G.H. Bauer, R. Brüggemann, S. Tardon, S. Vignoli, R. Kniese, "Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In1-xGax)Se2 thin films versus optical band gap", Thin Solid Films 480-481 (2005) 410-414.
   

• H. Graaf, W. Michaelis, G. Schnurpfeil, N. Jaeger and D. Schlettwein, Consequences of twisting the aromatic core of N,N’-dimethylperylene-3,4,9,10-biscarboximide by chemical substitution for the electronic coupling and electric transport in thin films',Organic Electronics, 5, 237-249 (2004).
   
• R. Brüggemann, Numerical modelling of transient photoconductivity for density-of-states determination in microcrystalline silicon, Physica status solidi. C 1, 1227 (2004).
   
• Gottfried H. Bauer, Rudolf Brüggemann, Maximilian Rösch, Saioa Tardon, and Thomas Unold, Numerical modelling as a tool for understanding room temperature photoluminescence in a-Si:H/c-Si heterojunction solar cells, Physica status solidi. C 1, 1308 (2004).
   
• C. Main, S. Reynolds, R. Brüggemann, Decay from steady-state photocurrent in amorphous semiconductors, Physica status solidi. C. 1, 1194 (2004).
   
• L. V. Govor, G.H. Bauer, G. Reiter, J. Parisi,"Deposits Formed at the Contact Line of Evaporating Micrometer-Size Droplets", Phys. Rev E 69 (2004) 061609.
   
• L. V. Govor, G. Reiter, G.H. Bauer, J. Parisi, "Nanoparticle Ring Formation in Evaporating Micron-size Droplets, Appl. Phys. Lett. 84 (2004) 4774.
   
• S. Tardon, M. Rösch, R. Brüggemann, T. Unold, G.H. Bauer, "Photoluminescence studies of a-Si:H/c-Si-heterojunction solar cells" Journal Non-Cryst. Sol. 338-340 (2004) 444 - 447.
   
• G.H. Bauer, R. Brüggemann, M. Rösch, S. Tardon, T. Unold," Numerical Modelling for Understanding Room Temperature Photoluminescence in a-Si:H/c-Si Heterojunction Solar Cells, " phys. stat. sol (c) 5 (2004) 1308-1315.
   

• F. Voigt, K. Hinsch, Schweben in elektromagnetischen Feldern, Phys. Unserer Zeit 34, 232 (2003).
   
• G.H. Bauer, P. Würfel, "Quantum Solar Energy Conversion in Organic Solar Cells", in: "Organic Photovoltaics", Springer Berlin (2003), pp.118-158.
   
• L. V. Govor, G.H. Bauer, G. Reiter, E. Shevchenko, H. Weller, J. Parisi, "Self-assembly of CoPt3 Nanoparticle Rings Based on Phase-Separated Hexadecylamine Droplet Structure", Langmuir 19 (2003) 9573.
   
• L. V. Govor, J. Parisi, G.H. Bauer, "Phase Separation Gives Rise to Nanoparticle Ring Formation", Z. Naturforschung 58a (2003) 392.
   

• R. Brüggemann and O. Kunz, Temperature Dependence of the Minority-Carrier  Mobility-Lifetime Product  for Probing Band-Tail States in Microcrystalline Silicon, phys. stat. sol. (b) 234,  R16-R18 (2002).
   
• R. Brüggemann, Band-tail profiling in microcrystalline silicon by photoconductivity analysis, J. Appl. Phys., (2002).
   
• R. Brüggemann, C. Main, and S. Reynolds, Depth profiling in amorphous and microcrystalline silicon by transient photoconductivity  techniques, J. Phys.:Condens. Matter 14, 6909 (2002).
   
• R. Brüggemann, Comment on: "Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with  subtle boron compensation" [APL 78, 2509 (2001)], Appl. Phys. Lett. 81, 781 (2002).
   
• R. Brüggemann, C. Main, and S. Reynolds, Transient photoconductivity for the identification of spatial inhomogeneities in the defect  density in amorphous silicon, physica status solidi A 191, 530 (2002).
   
• W. Bronner, M. Mehring, and R. Brüggemann, Transport and electrically detected electron spin resonance of microcrystalline silicon before and after electron irradiation, Phys. Rev. B 16, 165212 (2002).
   
• G.H. Bauer, F. Voigt, R. Carius, M. Krause, R. Brüggemann, T. Unold, Electronic Properties of Microcrystalline SiGe- Thin Films by Hall Experiments and Photo- and Dark Transport, J. Non-Cryst. Solids 299-302, 153 (2002).
   
• K. Bothe, G.H. Bauer, T. Unold, "Spatially resolved photoluminescence in CuGaInSe2 films", Thin Solid Films 403,453 (2002).
   
• G.H. Bauer, F. Voigt, R. Carius, M. Krause, R. Brüggemann, T. Unold, "Electronic Properties of Microcrystalline SiGe Thin Films by Hall Experiments and Photo and Dark Transport",Non-Cryst. Solids 269, 153 (2002).
   
• G.H. Bauer, F. Voigt, R. Carius, M. Krause, R. Brüggemann, and T. Unold, Electronic Properties of Microcrystalline SiGe Thin Films by Hall Experiments and Photo and Dark Transport", J. Non-Cryst. Solids 299-302, 153 (2002).
   

• R.Brüggemann, W. Bronner, M. Mehring, Influence of electron irradiation on the electronic properties of microcrystalline silicon, Solid State Comm. 119, 23 (2001)
   
• R. Carius, M. Krause, F. Finger, F. Voigt and H. Stiebig, Structural and Electronic Properties of Microcrystalline Silicon-Germanium Alloys, 11th International School on Condensed Matter Physics, Sep 2000, Varna, Bulgaria (2001) 18.
   

• R. Brüggemann, W. Bronner, Field-enhanced low-temperature photoconductivity in nano-crystalline silicon,  physica status solidi B 212, R15 (1999)
   
• T. Unold, M. Rösch, G.H.Bauer, Defects and transport in a-Si:H/c-Si heterojunctions, J. Non-Crystalline Solids 266-269,  1033 (2000)
   
• T. Unold, R. Brüggemann, J.P. Kleider, C. Longeaud, Anisotropy in the transport of microcrystalline silicon, Journal of Non-Crystalline Solids  266-269, 325 (2000)
   

• R. Brüggemann, M. Rösch and J. Meyer, Apparent quantum efficiencies greater than unity from lateral photocurrents,  Solar Energy Materials and Solar Cells 57, 303 (1999)
   
• R. Brüggemann and W. Bronner, Field-enhanced low-temperature photoconductivity in nanocrystalline silicon , physica status solidi B 212, R15 (1999)
   
• R. B. Wehrspohn, S.C. Deane, I.D. French, I.G. Gale, M.J. Powell, R. Brüggemann, Urbach energy dependence of the stability in amorphous silicon thin-film transistors, Appl. Phys. Lett. 74, 3374 (1999)
   
• C. Main, J.H. Zollondz, S. Reynolds, W. Gao, R. Brüggemann, M.J. Rose, Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures, J. Appl. Phys. 85, 296 (1999)
   

•  R. Brüggemann, Improved steady-state photocarrier grating in nanocrystalline thin films after surface-roughness reduction by mechanical polishing, Appl. Phys. Lett. 73,  500 (1998)
   
• R. Brüggemann and C. Main, Fermi level effect on steady state and transient photoconductivity in microcrystalline silicon, Phys Rev. B, 57 R 15080 (1998)
   
•  R. Brüggemann, M. Rojahn and M. Rösch, Normal and inverted Meyer-Neldel rule in hot-wire CVD deposited nanocrystalline silicon,  physica status solidi A, 166, R11 (1998).
   
• R. Brüggemann, A. Hierzenberger, H.N. Wanka and M.B. Schubert, Electronic properties of hot-wire deposited nanocrystalline silicon, Proc. MRS Symp. 507, 921 (1998).
   
•   H. Cordes, G.H. Bauer and R. Brüggemann, Transient Decay From The Steady State in Photoconductivity of Amorphous Semiconductors, Phys. Rev. B 58, 16160 (1998)
   

•  R. Brüggemann, Hole response time and the experimental test of the Einstein relation,  Phys. Rev. B 56, 6408 (1997)
   
•  R. Brüggemann, T. Neidlinger and M.B. Schubert, The operational principle of a new amorphous silicon based p-i-i-n color detector,  J. Appl. Phys. 81, 7666 (1997)
   
•  R. Brüggemann, Analysis of the photoconductive decay from a trapping perspective, Solid State Comm. 101, 199 (1997)
   

• C.-D. Abel, G.H. Bauer and, W.H. Bloss, Generalized Theory For Analytical Simulation of The Steady-State Photocarrier Grating Technique, Phil. Mag. B 72, 551 (1995)
   
• N. Bernhard, G.H. Bauer and W.H. Bloss, Band Gap Engineering of Amorphous Semiconductors for Solar Cell Applications, Progress in Photovoltaics 3, 149 (1995)
   
• N. Bernhard and G.H. Bauer, Physical Properties of a-Si:H Based Compositional Periodic Multilayers, Phys. Rev. B 52, 8829 (1995)
   
• G..H. Bauer, Amorphous Hydrogenated Silicon-Germanium Alloys, Solid State Phenom. B 44-46, 365 (1995)
   
•  R. Brüggemann, Numerical modelling of transient transport properties in amorphous semiconductors, Diffusion-and-Defect-Data-Part-B, Solid State Phenomena 44-46, 505 (1995).
   
• A.A. Pasa, W. Losch and G.H. Bauer, Two-Dimensional Growth of Si-Grains inside Au Thin Films, phys. stat. sol. B 192, 527 (1995)
   
•  M. Heintze and G.H. Bauer, Detection of SiH2 Radicals In An a-Si:H Deposition Plasma By Laser Induced Fluorescence, J. Phys. D 28, 2470 (1995)
   

• N. Bernhard, B. Frank, B. Movaghar and G.H. Bauer, Irregularities in Current-Voltage-Characteristics of a-Si:H Based Barrier Structures: Resonant Tunneling versus Hopping and Filamentary Conduction Through Barriers, Phil. Mag. B 70, 1139 (1994)
   
•  T.Unold, J.D. Cohen and C.M. Fortmann, Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys, Applied Physics Letters 64 (1994) 1714.
   
•  T.Unold, J. Hautala, and J.D. Cohen, Effect of carbon impurities on the density of states and the stability of hydrogenated amorphous silicon, Physical  Review B 50, 16985 (1994)
   

• G..H. Bauer, Thin Film Solar Cell Materials, Appl. Surf. Sci., 70/71, 650 (1993)
   
• S.D. Jones, Y. Chen, D.L. Williamson, R. Zedlitz and G.H. Bauer, Microstructural Transition and Degraded Optoelectronic Properties in Amorphous SiGe:H Alloys, Appl. Phys. Lett. 62, 3267 (1993)
   
• R. Brüggemann, C. Main and G.H. Bauer, Some Aspects of The Role of Holes in The Tran-sient Response of a-Si:H PIN Diodes,  J. Noncryst. Sol. 164-166, 663 (1993)
   
• R. Platz, R. Brüggemann and G.H. Bauer, More Insights From The Simulation For The Interpretation of The Constant Photocurrent Method, J. Noncryst. Sol., 164-166, 355 (1993)
   
• K. Eberhardt and G.H. Bauer, Effect of H-Content and H-Bonding configuration on Light and Thermal Induced Metastability in a-Ge:H, J. Noncryst. Sol. 164-166, 19 (1993)
   
• C.-D. Abel and G.H. Bauer, Evaluation of the Steady-State Photocarrier Grating Technique with Respect to a-Si:H and its Application to a-SiGe:H Alloys, Prog. in Photovoltaics 1, 269 (1993)
   
• M. Heintze, R. Zedlitz and G.H. Bauer, Analyses of High Rate a-Si:H Deposition in a VHF Plasma, J. Phys. D 26, 1781 (1993)
   
• J. Hautala, T. Unold, and J.D. Cohen, Effect of C impurities in a-Si:H measured by drive-level capacitance, photocurrent, and electron spin resonance, Mat.Res.Soc. Symp.Proc. 297, 375 (1993)
   
• T.Unold, and J.D.Cohen, Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD, Journal of Non-Crystalline Solids 164-166 23 (1993)