Halbleiterphysik/ Strahlungswandlung

Zeitschriftenaufsätze vor 2000

 



  • R. Brüggemann, M. Rösch and J. Meyer, Apparent quantum efficiencies greater than unity from lateral photocurrents,  Solar Energy Materials and Solar Cells 57, 303 (1999)
     
  • R. Brüggemann and W. Bronner, Field-enhanced low-temperature photoconductivity in nanocrystalline silicon , physica status solidi B 212, R15 (1999)
     
  • R. B. Wehrspohn, S.C. Deane, I.D. French, I.G. Gale, M.J. Powell, R. Brüggemann, Urbach energy dependence of the stability in amorphous silicon thin-film transistors, Appl. Phys. Lett. 74, 3374 (1999)
     
  • C. Main, J.H. Zollondz, S. Reynolds, W. Gao, R. Brüggemann, M.J. Rose, Investigation of collection efficiencies much larger than unity in a-Si : H p-i-n structures, J. Appl. Phys. 85, 296 (1999)
     



  •  R. Brüggemann, Improved steady-state photocarrier grating in nanocrystalline thin films after surface-roughness reduction by mechanical polishing, Appl. Phys. Lett. 73,  500 (1998)
     
  • R. Brüggemann and C. Main, Fermi level effect on steady state and transient photoconductivity in microcrystalline silicon, Phys Rev. B, 57 R 15080 (1998)
     
  •  R. Brüggemann, M. Rojahn and M. Rösch, Normal and inverted Meyer-Neldel rule in hot-wire CVD deposited nanocrystalline silicon,  physica status solidi A, 166, R11 (1998).
     
  • R. Brüggemann, A. Hierzenberger, H.N. Wanka and M.B. Schubert, Electronic properties of hot-wire deposited nanocrystalline silicon, Proc. MRS Symp. 507, 921 (1998).
     
  •   H. Cordes, G.H. Bauer and R. Brüggemann, Transient Decay From The Steady State in Photoconductivity of Amorphous Semiconductors, Phys. Rev. B 58, 16160 (1998)
     



  •  R. Brüggemann, Hole response time and the experimental test of the Einstein relation,  Phys. Rev. B 56, 6408 (1997)
     
  •  R. Brüggemann, T. Neidlinger and M.B. Schubert, The operational principle of a new amorphous silicon based p-i-i-n color detector,  J. Appl. Phys. 81, 7666 (1997)
     
  •  R. Brüggemann, Analysis of the photoconductive decay from a trapping perspective, Solid State Comm. 101, 199 (1997)
     



  • C.-D. Abel, G.H. Bauer and, W.H. Bloss, Generalized Theory For Analytical Simulation of The Steady-State Photocarrier Grating Technique, Phil. Mag. B 72, 551 (1995)
     
  • N. Bernhard, G.H. Bauer and W.H. Bloss, Band Gap Engineering of Amorphous Semiconductors for Solar Cell Applications, Progress in Photovoltaics 3, 149 (1995)
     
  • N. Bernhard and G.H. Bauer, Physical Properties of a-Si:H Based Compositional Periodic Multilayers, Phys. Rev. B 52, 8829 (1995)
     
  • G..H. Bauer, Amorphous Hydrogenated Silicon-Germanium Alloys, Solid State Phenom. B 44-46, 365 (1995)
     
  •  R. Brüggemann, Numerical modelling of transient transport properties in amorphous semiconductors, Diffusion-and-Defect-Data-Part-B, Solid State Phenomena 44-46, 505 (1995).
     
  • A.A. Pasa, W. Losch and G.H. Bauer, Two-Dimensional Growth of Si-Grains inside Au Thin Films, phys. stat. sol. B 192, 527 (1995)
     
  •  M. Heintze and G.H. Bauer, Detection of SiH2 Radicals In An a-Si:H Deposition Plasma By Laser Induced Fluorescence, J. Phys. D 28, 2470 (1995)
     



  • N. Bernhard, B. Frank, B. Movaghar and G.H. Bauer, Irregularities in Current-Voltage-Characteristics of a-Si:H Based Barrier Structures: Resonant Tunneling versus Hopping and Filamentary Conduction Through Barriers, Phil. Mag. B 70, 1139 (1994)
     
  •  T.Unold, J.D. Cohen and C.M. Fortmann, Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys, Applied Physics Letters 64 (1994) 1714.
     
  •  T.Unold, J. Hautala, and J.D. Cohen, Effect of carbon impurities on the density of states and the stability of hydrogenated amorphous silicon, Physical  Review B 50, 16985 (1994)
     



  • G..H. Bauer, Thin Film Solar Cell Materials, Appl. Surf. Sci., 70/71, 650 (1993)
     
  • S.D. Jones, Y. Chen, D.L. Williamson, R. Zedlitz and G.H. Bauer, Microstructural Transition and Degraded Optoelectronic Properties in Amorphous SiGe:H Alloys, Appl. Phys. Lett. 62, 3267 (1993)
     
  • R. Brüggemann, C. Main and G.H. Bauer, Some Aspects of The Role of Holes in The Tran-sient Response of a-Si:H PIN Diodes,  J. Noncryst. Sol. 164-166, 663 (1993)
     
  • R. Platz, R. Brüggemann and G.H. Bauer, More Insights From The Simulation For The Interpretation of The Constant Photocurrent Method, J. Noncryst. Sol., 164-166, 355 (1993)
     
  • K. Eberhardt and G.H. Bauer, Effect of H-Content and H-Bonding configuration on Light and Thermal Induced Metastability in a-Ge:H, J. Noncryst. Sol. 164-166, 19 (1993)
     
  • C.-D. Abel and G.H. Bauer, Evaluation of the Steady-State Photocarrier Grating Technique with Respect to a-Si:H and its Application to a-SiGe:H Alloys, Prog. in Photovoltaics 1, 269 (1993)
     
  • M. Heintze, R. Zedlitz and G.H. Bauer, Analyses of High Rate a-Si:H Deposition in a VHF Plasma, J. Phys. D 26, 1781 (1993)
     
  • J. Hautala, T. Unold, and J.D. Cohen, Effect of C impurities in a-Si:H measured by drive-level capacitance, photocurrent, and electron spin resonance, Mat.Res.Soc. Symp.Proc. 297, 375 (1993)
     
  • T.Unold, and J.D.Cohen, Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD, Journal of Non-Crystalline Solids 164-166 23 (1993)